Nexperia announced a USD 200 million investment—about EUR 184 million—in its Hamburg semiconductor facility on June 27, 2024. The 2024–2025 program is intended to add silicon-carbide (SiC) and gallium-nitride (GaN) chip development and production, expand existing silicon output, and upgrade the site. Nexperia said the first high-voltage GaN D-mode transistor and SiC diode lines started in June 2024; 200 mm production lines for SiC MOSFETs and GaN HEMTs were the next milestone, planned over the following two years.
How much is Nexperia investing in Hamburg?
Nexperia announced USD 200 million, approximately EUR 184 million, for the Hamburg site on June 27, 2024. Its 2025 sustainability report describes the effort as a 2024–2025 program to advance wide-bandgap production. The announcement establishes the planned investment and scope; it does not establish that every part of the program was completed by October 2026 or give an independently audited final capacity figure.
The company says the investment is intended to strengthen energy-efficient semiconductor supply and bring wide-bandgap chip design and production to Hamburg. Its stated strategic aims include supporting power-hungry data centers, renewable energy, electrification, and digitalization, as well as European semiconductor self-sufficiency. Those are company objectives, not quantified outcomes in the cited announcements.
What will the Hamburg facility make?
The project combines new wide-bandgap devices with expansion and modernization of existing silicon production.
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| Technology or work | What Nexperia says is planned or underway |
|---|---|
| GaN | High-voltage GaN D-mode transistor lines started in June 2024. Production lines for GaN HEMTs on 200 mm wafers were identified as a subsequent milestone. |
| SiC | SiC diode lines started in June 2024. Production lines for SiC MOSFETs on 200 mm wafers were identified as a subsequent milestone. |
| Existing silicon products | Expand diode and transistor capacity, with silicon production conversion to 200 mm wafers included in the upgrades. |
| Site infrastructure and research | Automation, clean-room expansion, and new R&D laboratories. |
SiC and GaN are wide-bandgap semiconductor materials used in power electronics. The announced product types are distinct: a MOSFET is a transistor, a HEMT is a high-electron-mobility transistor, and the project also includes diode production. Nexperia has not published a final output figure in the cited material, so the announcement should not be read as a specific number of chips or a measured capacity increase.
When will the new production lines start?
Nexperia reported that the first high-voltage GaN D-mode transistor and SiC diode lines started in June 2024. For the 200 mm SiC MOSFET and GaN HEMT lines, the company described them as the next milestone and planned them over the following two years. Its sustainability report characterizes the wider investment as running through 2024–2025. These dates describe announced milestones and program timing; they are not confirmation that every 200 mm line reached volume production on schedule.
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Who is supplying the 200 mm equipment?
AIXTRON announced on July 16, 2024, that it was supporting Nexperia’s 200 mm SiC and GaN volume-production ramp at Hamburg with G10 tools. This identifies a named equipment supplier and tool family for the ramp; the cited announcement does not establish that AIXTRON supplied all equipment for the investment.
Independent reader supportYour contribution helps us test, update, and keep practical guides available for everyone.Why is the Hamburg site significant?
Nexperia says Hamburg employment grew from 950 to around 1,600 after the site’s 2017 spin-off from NXP, and that the facility supplies around one quarter of global demand for small-signal diodes and transistors. These are company-reported figures that describe the existing site, not a forecast of jobs or output attributable to the new investment.
Do these 3 things before closing this tab:
1Fix the driver behind crashes, sound loss and screen glitches2Clear out junk files and repair common Windows errors3Scan for outdated or missing drivers - takes under a minuteThe expansion therefore has two connected dimensions: adding SiC and GaN capabilities and scaling or modernizing established silicon manufacturing. Nexperia also cites cooperation with universities and research institutes as part of local skills development, but the available company material does not quantify resulting job creation or the completed production capacity.
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What the announcement does—and does not—confirm
- Confirmed by Nexperia: a USD 200 million investment announcement, the project’s broad scope, and the June 2024 start of the initial GaN D-mode transistor and SiC diode lines.
- Planned milestone: 200 mm SiC MOSFET and GaN HEMT production lines, described as the next step over the following two years.
- Supplier named: AIXTRON said its G10 tools were supporting the 200 mm volume-production ramp.
- Not established by the cited material: completion of every investment element, independently verified post-project capacity, or quantified jobs and output resulting from the expansion.
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